Texas A&M International University

Temporary Faculty

Instructor for survey and general physics courses

Instructor for physics and chemistry labs

Experience with large classroom sizes (70-100 students)

Engaged students with a variety of interactive learning techniques

Supervised Honors projects for two students

Experience with Blackboard

Volunteered for the following:

Judged science project exhibition for a local magnet high school (1/10/17 and 5/24/17)

Judged the LBV Conference held at Texas A&M International University

Assisted with Discover TAMIU, a university Open House that offers the community a look at Texas A&M International University

Judged FIRSTinspires competitions held at Texas A&M International University (1/18/18 and 2/9/18)

Texas A&M International University

Temporary Faculty

Began preparation work for Temporary Faculty position at Texas A&M International University

Designed lectures for an entire course

Auburn University

Graduate Student

Completed Ph. D. dissertation and defended.

Auburn University

Post Doctoral Research

Continued to expand upon Ph.D. research

Fabricated boron implanted lateral SiC MOSFETs and SiC MOS capacitors

Worked with graduate students who were expanding upon my antimony implantation process

Auburn University

Research Assistant

Increased channel mobility in lateral SiC MOSFETs by developing novel SiC/SiO2 interface passivation processes using antimony implantation and nitrogen plasma.

Fabricated and characterized SiC MOS capacitors and lateral MOSFETs demonstrating the effectiveness of the passivation processes

Collaborated on SiC MOSFET research with several universities and the Army

Prepared semiannual progress reports for the foundation supporting this work

Department of the Air Force, Wright-Patterson AFB

Engineering Technician

Assisted in development of new techniques using transducers for nondestructive evaluation of microcracks in materials related to aircraft

Novel Interface Trap Passivation and Channel Counter-doping for 4H-SiC MOSFETs

Auburn University

Ph. D. dissertation

Novel Interface Trap Passivation and Channel Counter-doping for 4H-SiC MOSFETs

Auburn University

Ph. D. dissertation

Novel Interface Trap Passivation and Channel Counter-doping for 4H-SiC MOSFETs

Auburn University

Ph. D. dissertation

Aggregation Behavior and Chromonic Liquid Crystal Properties of an Anionic Monoazo Dye

Physical Review E

Novel Interface Trap Passivation and Channel Counter-doping for 4H-SiC MOSFETs

Auburn University

Ph. D. dissertation

Aggregation Behavior and Chromonic Liquid Crystal Properties of an Anionic Monoazo Dye

Physical Review E

High Channel Mobility 4H-SiC MOSFETs by Antimony Counter-Doping

IEEE Electronic Device Letters

Novel Interface Trap Passivation and Channel Counter-doping for 4H-SiC MOSFETs

Auburn University

Ph. D. dissertation

Aggregation Behavior and Chromonic Liquid Crystal Properties of an Anionic Monoazo Dye

Physical Review E

High Channel Mobility 4H-SiC MOSFETs by Antimony Counter-Doping

IEEE Electronic Device Letters

Surface-Breaking Crack Depth Assessment Using Near-Field Surface Acoustic Wave Signal Response

American Institute of Physics

Novel Interface Trap Passivation and Channel Counter-doping for 4H-SiC MOSFETs

Auburn University

Ph. D. dissertation

Aggregation Behavior and Chromonic Liquid Crystal Properties of an Anionic Monoazo Dye

Physical Review E

High Channel Mobility 4H-SiC MOSFETs by Antimony Counter-Doping

IEEE Electronic Device Letters

Surface-Breaking Crack Depth Assessment Using Near-Field Surface Acoustic Wave Signal Response

American Institute of Physics

Nitrogen Plasma Processing of SiO2/4H-SiC Interfaces

Journal of Electronic Materials

Novel Interface Trap Passivation and Channel Counter-doping for 4H-SiC MOSFETs

Auburn University

Ph. D. dissertation

Aggregation Behavior and Chromonic Liquid Crystal Properties of an Anionic Monoazo Dye

Physical Review E

High Channel Mobility 4H-SiC MOSFETs by Antimony Counter-Doping

IEEE Electronic Device Letters

Surface-Breaking Crack Depth Assessment Using Near-Field Surface Acoustic Wave Signal Response

American Institute of Physics

Nitrogen Plasma Processing of SiO2/4H-SiC Interfaces

Journal of Electronic Materials

Advancements in SiC Power Devices Using Novel Interface Passivation Processes

Physics of Semiconductor Devices

Novel Interface Trap Passivation and Channel Counter-doping for 4H-SiC MOSFETs

Auburn University

Ph. D. dissertation

Aggregation Behavior and Chromonic Liquid Crystal Properties of an Anionic Monoazo Dye

Physical Review E

High Channel Mobility 4H-SiC MOSFETs by Antimony Counter-Doping

IEEE Electronic Device Letters

Surface-Breaking Crack Depth Assessment Using Near-Field Surface Acoustic Wave Signal Response

American Institute of Physics

Nitrogen Plasma Processing of SiO2/4H-SiC Interfaces

Journal of Electronic Materials

Advancements in SiC Power Devices Using Novel Interface Passivation Processes

Physics of Semiconductor Devices

Thin PSG Process for 4H-SiC MOSFET

Materials Science Forums

Novel Interface Trap Passivation and Channel Counter-doping for 4H-SiC MOSFETs

Auburn University

Ph. D. dissertation

Aggregation Behavior and Chromonic Liquid Crystal Properties of an Anionic Monoazo Dye

Physical Review E

High Channel Mobility 4H-SiC MOSFETs by Antimony Counter-Doping

IEEE Electronic Device Letters

Surface-Breaking Crack Depth Assessment Using Near-Field Surface Acoustic Wave Signal Response

American Institute of Physics

Nitrogen Plasma Processing of SiO2/4H-SiC Interfaces

Journal of Electronic Materials

Advancements in SiC Power Devices Using Novel Interface Passivation Processes

Physics of Semiconductor Devices

Thin PSG Process for 4H-SiC MOSFET

Materials Science Forums

Concentration, chemical bonding and etching behavior of P and N at the SiO2/SiC(0001) interface

Journal of Applied Physics